a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv ceo i c = 50 ma 16 v bv ces i c = 10 ma 36 v bv ebo i e = 5.0 ma 4.0 v i ces v ce = 12.5 v 5 ma h fe v ce = 5.0 v i c = 1.0 a 10 --- --- c ob v cb = 12.5 v f = 1.0 mhz 80 pf p g h h c v cc = 12.5 v p out = 25 w f = 470 mhz 6.5 60 db % npn silicon rf power transistor ulbm25 description: the asi ulbm25 is designed for features: omnigold ? metalization system maximum ratings i c 4.8 a v cbo 36 v v ceo 16 v v ces 36 v v ebo 4.0 v p diss 70 w @ t c = 25 o c t j - 65 o c to +200 o c t st g - 65 o c to +150 o c q q jc 2.5 o c/w package style .500 6l flg order code: asi10683 minimum inches / mm .490 / 12.45 .210 / 5.33 .003 / 0.08 b c d e f g a maximum .220 / 5.59 .007 / 0.18 .510 / 12.95 inches / mm .725 / 18.42 h dim k l i j .970 / 24.64 .980 / 24.89 .170 / 4.32 n m .120 / 3.05 .135 / 3.43 .150 / 3.43 .160 / 4.06 .125 / 3.18 .090 / 2.29 .105 / 2.67 .285 / 7.24 .150 / 3.81 .045 / 1.14 e f .725/18,42 i g j k l m a d c b 2x ?n full r h .835 / 21.21 .865 / 21.97 .210 / 5.33 .200 / 5.08
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